Abstract
The effect of ionizing radiation on electrical properties of oxide dielectrics is studied. A comparative analysis of the temperature dependence of electrical conduction is performed for non-irradiated and irradiated samples of three types of oxide dielectrics—aluminum oxide, silicon dioxide, and alumina ceramics—in the temperature range between 200 and 700 K. The data obtained are correlated with special features of thermoradiation modification of dielectric parameters of oxides. The behavior of the dielectric loss tangent and permittivity is determined in a wide range of temperatures and γ-radiation doses. The peak conductivity parameters of ceramic samples are calculated. An assumption is made on the nature of the observed features of temperature and dose dependences of electrical properties of oxide dielectrics as well as on a possible admittance mechanism in these materials.
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