Abstract
It is demonstrated that CH 2Cl 2, CH 3l and CH 2l 2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH 2 Cl 2 < CH 3 l < CH 2 l 2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.
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