A comparative study of the adsorption of CH 2Cl 2, CH 3I and CH 2I 2 on GaAs(100) surfaces at 300 K

Abstract

It is demonstrated that CH 2Cl 2, CH 3l and CH 2l 2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH 2 Cl 2 < CH 3 l < CH 2 l 2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.