Abstract
The results of both theoretical and experimental studies of the current-voltage characteristics of amorphous silicon alloy n-i-n and forward biased p-i-n diodes are presented. The double injection current in the p-i-n diodes exceeds the single injection current in the n-i-n diodes by several orders of magnitude due to space charge neutralization in the intrinsic layer. A good fit to the experimental data is obtained with a model based on a density of gap states which increases exponentially towards both the conduction and valence band, and for electron and hole band mobilities of 20 and 4 cm 4/Vsec, respectively.
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