A comparative study of reduced graphene oxide synthesized through different techniques for UV-C radiation detection application

Abstract

In this work, reduced Graphene oxide (rGO) is synthesized through three different chemical routes of synthesis and they are used for the fabrication of UV radiation detectors working in the 100–280 nm range. The fabricated device is a Silicon based radiation detectors with these different synthesized samples of rGO as the sensing material. The photon detector has an architecture of a field effect transistor working in the back-gate mode of operation. The device response is studied in presence of UV rays for all the three types of devices in the back-illumination mode of operation. A comparative analysis of the performance of these three devices is done to analyze the effect of rate of reduction on the device performance and its correlation with the properties of rGO. It was observed that higher the rate of reduction, better is the performance of the device. The effect can be correlated with the improved electrical conductivity and reduced bandgap of rGO.