Abstract
Low-field leakage currents in thin gate oxides can beinduced by 10 keV x-ray irradiation and electrical stress. Thecharacteristics of radiation-induced leakage current (RILC) andstress-induced leakage current (SILC) in thin oxides have beenstudied and compared. The characteristics of RILC are found tobe very similar to SILC, indicating that both RILC and SILC haveessentially the same conduction mechanism, and are contributedby common defects generated in the gate oxides duringirradiation or electrical stress. In particular, it has beendemonstrated that oxide-trapped holes contribute significantlyto both RILC and SILC.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Semiconductor Science and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
