Abstract
Low-field leakage currents in thin gate oxides can beinduced by 10 keV x-ray irradiation and electrical stress. Thecharacteristics of radiation-induced leakage current (RILC) andstress-induced leakage current (SILC) in thin oxides have beenstudied and compared. The characteristics of RILC are found tobe very similar to SILC, indicating that both RILC and SILC haveessentially the same conduction mechanism, and are contributedby common defects generated in the gate oxides duringirradiation or electrical stress. In particular, it has beendemonstrated that oxide-trapped holes contribute significantlyto both RILC and SILC.
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