Abstract
A comparative study of two different analytical models of accumulation-mode SOI p-channel G4-FET has been reported and accuracy of the models has been observed under different parametric variation and biasing conditions. A numerical model is developed by Silvaco/ATLAS 3-D simulator which incorporates various non ideal effects like concentration dependant mobility, Shockley-Read-Hall recombination, Auger recombination and bandgap narrowing effect. The accuracy of the analytical models are tested by the numerical model. The performance of varying different parameters like length, width, silicon thickness and gate biasing is also observed between lateral junction gates and between top and bottom gates.
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