Abstract
InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy.
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