A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF[sub 2] Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant.

Abstract

Highly active, ultra‐shallow and abrupt dopant profiles are required for future generations of CMOS devices. A possible way to achieve this is to use pre‐amorphization implantation (PAI) and solid phase epitaxial re‐growth. B and BF2 implants were studied in bulk silicon and silicon‐on‐insulator with Ge PAI. Results show that buried oxide (BOX) in SOI can be used a sink for silicon interstitials contributing to boron Transient Enhanced Diffusion and Boron‐Interstitial Clustering. The BF2 implants show high mobility values and no deactivation.