Abstract
Electrical properties and carrier profiles for shallow donors in Si produced by hydrogen (H) and deuterium (D) implantation at 50–150 keV and subsequent annealing have been compared. The C- V and the junction depth measurements show similar carrier profiles and peak depths for both species, which suggests that the range or the stopping power depends little upon the isotope mass for D and H in this low energy region. The H-implantation-induced donor concentration decreases drastically as the acceleration energy decreases, while the D-implantation-induced one decreases little. The higher backscattering loss for H implantation may be one of the reasons. The H-implantation-induced shallow donors anneal out at about 25 ° C lower temperatures than the d-implanta- tion-induced ones. This fact supports the view that H or D are directly concerned with these shallow donors.
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