Abstract
Scale-up to large-area Cu(In,Ga)Se2 (CIGS) solar panels is proving to be much more complicated than expected. Particularly, the non-vacuum wet-chemical buffer layer formation step has remained a challenge and has acted as a bottleneck in industrial implementations for mass-production. This technical note deals with the comparative analysis of the impact on different methodologies for the buffer layer formation on CIGS solar panels. Cd(1-x)ZnxS ((Cd,Zn)S) thin films were prepared by chemical bath deposition (CBD), and chemical surface deposition (CSD) for 24-inch (37 cm × 47 cm) patterned CIGS solar panel applications. Buffer layers deposited by the CBD method showed a higher Zn addition level and transmittance than those prepared by the CSD technique due to the predominant cluster-by-cluster growth mechanism, and this induced a difference in the solar cell performance, consequently. The CIGS panels with (Cd,Zn)S buffer layer formed by the CBD method showed a 0.5% point higher conversion efficiency than that of panels with a conventional CdS buffer layer, owing to the increased current density and open-circuit voltage. The samples with the CSD (Cd,Zn)S buffer layer also increased the conversion efficiency with 0.3% point than conventional panels, but mainly due to the increased fill factor.
Highlights
One of the most appealing advantages of Cu(In,Ga)Se2 -based (CIGS) solar cells is the potential to grow CIGS thin films on large-area substrates using an in-line vacuum deposition equipment leading to a high-throughput process [1,2]
The non-vacuum wet-chemical buffer layer formation step has acted as a bottleneck in industrial implementations for mass-production, since it prevents true in-line processing [3]
The present study is aimed at the comparative investigation on the deposition of a (Cd,Zn)S film on indium tin oxide (ITO) and CIGS PV panel made in pilot production factory using a conventional chemical bath deposition (CBD)- and chemical surface deposition (CSD)-type equipment
Summary
One of the most appealing advantages of Cu(In,Ga)Se2 -based (CIGS) solar cells is the potential to grow CIGS thin films on large-area substrates using an in-line vacuum deposition equipment leading to a high-throughput process [1,2]. Owing to these advantages, the CSD CdS a heating line where a thermostat and a mechanical stirrer provide continuous warm water flow. CBD-based CdS process for the CIGS PV modules because of the relatively poor reproducibility of existing ZnS growth methods (in most cases—chemical solution deposition) [14,15], probably due to low solubility product of ZnS process (i.e., Zn(OH)2 ) resulting in a loose thin-film structure [16,17]. The present study is aimed at the comparative investigation on the deposition of a (Cd,Zn)S film on indium tin oxide (ITO) and CIGS PV panel made in pilot production factory using a conventional (i.e., dipping) CBD- and chemical surface deposition (CSD)-type equipment. We discuss the operational parameters that merit the most attention in further equipment design towards the mass production line of CIGS PV panels
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