Abstract
An effective back surface field is a key structural element for a high-efficiency GaAs concentrator solar cell, either in a multijunction or in a single-junction device. In this paper, several BSF materials are analysed, namely: (1) p++GaAs(Zn), (2) p+Ga0.5In0.5P(Zn) and (3) p++Al0.2Ga0.8As(C). The results of the comparison demonstrate that the best option is C-doped Al0.2Ga0.8As, which exhibits a low series resistance and behaves as an excellent minority carrier mirror; p++GaAs(Zn) shows reduced minority carrier mirror properties resulting from Zn diffusion and p+Ga0.5In0.5P(Zn) is shown to produce important series resistance problems because of an unfavourable heterojunction with GaAs.
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