Abstract
We have applied the adiabatic bond-charge model, within a supercell approach, to study atomic vibrational modes on GaAs(110) and InAs(110) surfaces. Modes corresponding to atomic vibrations in the top two surface layers have been analysed according to the reducible representation of the point group symmetry of the surface unit cell. Our results are in agreement with recent ab initio pseudopotential calculations which have been performed at symmetry points and along two certain symmetry directions. Our calculated results are also compared with He-atom scattering and high-resolution electron energy loss (HREELS) measurements for GaAs(110), and HREELS measurements for InAs(110). We attempt to compare results for the two surfaces in terms of the reduced mass difference.
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