Abstract
The atomic layer depositions of Al2O3 and HfO2 on AlGaN/GaN were systematically studied. The band alignments of Al2O3/AlGaN and HfO2/AlGaN were investigated using in situ X-ray photoelectron spectroscopy. A conduction band offset of 1.8 and 1.1 eV were observed for Al2O3/AlGaN and HfO2/AlGaN, respectively. The Al2O3 and HfO2 dielectric layers were found to reduce the leakage current as expected with respect to metal/AlGaN/GaN Schottky diodes, but neither changes the surface states of AlGaN. The positive ionized surface donor states density and average interface state density (D it ) below the AlGaN conduction band edge (0.34 < E C − E T < 0.50 eV), extracted from capacitance voltage (C–V) curves, were ~5 × 1013 cm−2 and 1.1 × 1014 cm−2 eV−1, respectively.
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