A Comparative Study between Negative & Positive Bias Temperature Instability of Commercial nano-MOSFETs Using Voltage Step Stress Technique

Abstract

Bias temperature instability (BTI) has been one of the most common and also severe aging mechanisms in MOSFETs. In this work, a comparative study between NBTI and PBTI of commercial nano-MOSFETs has been conducted using the voltage step stress (VSS) technique, which is implemented by applying multiple constant voltage stress (CVS) continuously on a single device. Aging parameters are extracted for both NBTI and PBTI from a single device using the VSS technique, and the lifetime under room temperature is predicted. This work is of potential use for BTI investigation of commercial nano-MOSFETs in terms of both test efficiency and affordability.