Abstract
This paper presents a comparative evaluation of silicon carbide power devices for the domestic induction heating (IH) application, which currently has a major industrial, economic and social impact. The compared technologies include MOSFETs, normally on and normally off JFETs, as well as BJTs. These devices have been compared according to different figure-of-merit evaluating conduction and switching performance, efficiency, impact of temperature, as well as other driving and protection issues. To perform the proposed evaluation, a versatile test platform has been developed. As a result of this study, several differential features are identified and discussed, taking into account the pursued induction heating application.
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