A comparative analysis of solid-state quantum dot-sensitized solar cells employing various hole transport layers, metal contacts, and a sensitizer comprising PbS/CdS/ZnS quantum dots

Abstract

Quantum dots, as a sensitizer in quantum dot-sensitized solar cells (QDSSCs), hold the promise of revolutionizing solar energy conversion. This research mainly focuses on employing PbS/CdS/ZnS quantum dots (QDs) as both light harvesters and passivation layers in QDSSCs, which are directly synthesized onto the pre-deposited TiO2 substrate through the Successive Ionic Layer Adsorption and Reaction (SILAR) technique. Particularly, the sample with a composition of 2 cycles of PbS, 6 cycles of CdS, and 2 cycles of ZnS (2/6/2) exhibited a wide-ranging and intense absorption spectrum, attributed to the reduction in band gap with escalation in number of SILAR cycles. The prepared samples underwent analysis through characterization methods, including SEM and XRD, and the elemental composition was examined using EDX spectroscopy. Subsequently, the 2/6/2 sample was employed as a sensitizer, with P3HT and PEDOT:PSS serving as the hole transport layers (HTL). For the metal contacts, thermally evaporated gold (Au), silver (Ag), and Ag paste were used in the fabrication of six distinct devices. FTO/TiO2/PbS/CdS/ZnS/P3HT/Au shows the best performance demonstrating PCE of 2.17 %, Jsc of 7.9 mA/cm2 Voc of 0.54 V and FF of 0.51. However, overall efficiency dropped significantly for other configurations. Additionally, impedance spectroscopic analysis revealed a notably low series resistance for the P3HT/Au configuration.