A compact wideband CMOS LNA with low power consumption

Abstract

In this letter, a wideband low noise amplifier (LNA) operating at 1–5 GHz is proposed.The circuit is designed with a TSMC 0.18-μm RF CMOS process. To obtain high transconductance with low power consumption, two types of inverters are used. The proposed LNA is expected to reduce the size of chip about 70–80% by using only the single-spiral inductor. The measured voltage gain is 14.4–15.5 dB and noise figure (NF) is 4.3–5.0 dB from 1–5 GHz. The total power consumption of the proposed LNA is 9.8 mW from a 1.4 V supply voltage and chip area occupies only 0.5 × 0.5 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2360–2363, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27086