Abstract
This letter presents the design of a compact, wideband, and high-efficiency $E$ -band power amplifier, integrated in a 0.13- $\mu \text{m}$ BiCMOS process and occupying 0.3 mm2. It consists of a single-stage balanced amplifier, with HBT transistors in cascode configuration. The power amplifier (PA) is biased in class AB, with a dc consumption of 156 mW. A compact bias circuit is employed to achieve temperature robustness, while the layout is optimized for wideband and highly efficient operation. Measurements show a peak power gain of 15.3 dB at 83 GHz, with a 29.3% fractional bandwidth and less than 1-dB degradation over a 25 °C–85 °C temperature range. The peak output power at saturation and 1-dB compression is 18.6 and 13.6 dBm, respectively, and the maximum power-added efficiency (PAE) is 30.7%.
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