Abstract
This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively split the termination region into three functional zones. The proposed termination structure is cost effective in terms of the chip area it occupies; for devices rated at 10 kV, the termination structure extends the edge of the device by only 250 μm. Requiring only one implant, it is relatively cheap to fabricate, while a wide implantation dose window endures that is relatively insensitive to variations in dose that may occur during processing. The same advantages occur at 20 kV, the TSM-JTE proving to have the best tradeoff between maximum breakdown voltage and implantation window, compared with other single implant termination designs, achieving this in 500 μm of termination length. At 3.3 kV, a 110-μm TSM-JTE retains its advantages over the other JTE designs, but floating field rings are expected to consume less area, though this is not the case at the higher voltages.
Highlights
T HE superior electrical and thermal properties of silicon carbide (SiC) have made it an excellent candidate for high power applications. 4H-SiC devices rated above 10 kV are an attractive prospect for grid applications, in order to reduce the number of devices required in, for example, voltage-source converters
This study focuses initially on the development of the trenchassisted space-modulated junction termination extension (TSM-junction termination extension (JTE)) and its optimization at 10 kV, while the results of structures optimized for 20- and 3.3-kV devices are presented
The proposed TSM-JTE design is benchmarked to single-zone JTE (SZ-JTE), space-modulated JTE (SM-JTE), and multiple-floating-zone JTE (MFZ-JTE) designs, each of which is fabricated with only one implantation step
Summary
T HE superior electrical and thermal properties of silicon carbide (SiC) have made it an excellent candidate for high power applications. 4H-SiC devices rated above 10 kV are an attractive prospect for grid applications, in order to reduce the number of devices required in, for example, voltage-source converters. 4H-SiC devices rated above 10 kV are an attractive prospect for grid applications, in order to reduce the number of devices required in, for example, voltage-source converters. T HE superior electrical and thermal properties of silicon carbide (SiC) have made it an excellent candidate for high power applications. The realization of these high-voltage devices is based on the continual improvement in the epitaxial growth of thick 4H-SiC (>100 μm), with a marked improvement in defect densities [1]; the starting wafers remain expensive.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
