Abstract
A compact physical model for the operation of polycrystalline pentacene thin-film transistors is presented here, valid in both linear and saturation regimes by including the Gaussian energy distribution of the grain-boundary traps. The effect of the temperature is also taken into account. The proposed model has been verified by comparing the simulated results with the experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.