Abstract
This paper presents a unified physical formulation for the avalanche effect in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at different injection levels. Based on an analytical description of the resulting electric-field distribution, a closed-form analytical expression for the multiplication factor is derived and has been implemented in the HICUM compact model. The model accuracy close to and beyond the common-emitter breakdown voltage BVCEO has been assessed over a wide temperature range in comparison to measurements of SiGe HBTs with different collector doping profiles and emitter geometries.
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