A Compact Current-Transfer Model in Resonant-Tunneling Structures with Consideration of Interelectronic Interaction

Abstract

A compact analytical model of current transfer was developed to estimate the characteristics of heterostructured devices. The absence of empirical correction factors and the explicit accounting of the interelectronic interaction differentiates it from previous similar models. The model obtains an estimates of the electron density in the quantum well of the heterostructural channel and applies a self-consistent correction for resonance levels. It also provides accuracy in the positive differential resistance region of the I–V characteristics in the AlGaAs structures, with an average relative error not exceeding 2%. The time complexity of the calculations of the I–V characteristics using this model is several orders of magnitude less than that of calculations using ab initio models. Its high accuracy and low temporal complexity of calculations of I–V characteristics allow this model to be integrated in systems for the design and calculation of reliability indicators for devices, including terahertz devices.