Abstract
A compact-charge LDD-MOSFET model, based on an analytical surface potential formulation at source and drain has been derived and implemented in the circuit simulator SABER for all channel length and width down to deep submicrometer. Besides well-known short- and narrow-channel effects, the model includes additional charge effects around the threshold voltage as well as a bias dependent charge description of the overlap LDD(S)-region. These additional capacitance effects are not considered in conventional submicrometer transistor models although they domain the capacitance characteristic with further downscaling. If not taken into account, simulation errors of, e.g., up to 50% in the frequency of a 0.3 /spl mu/m CMOS ring oscillator or over 100% in the 3 dB critical frequency of amplifier circuits can result.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
