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Abstract
An asymmetric Mach—Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200 μm long phase shifters. The measured figure of merit VπL = 0.23 V ·mm shows highly efficient modulation by the device, and an open eye-diagram at 3.2 Gbit/s confirmed its fast electro-optic response. Integrated with the grating coupler, the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C-band and part L-band of optical communication.
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