Abstract
The design and performance of a compact X-band power amplifier MMIC utilizing Nanjing Electronic Devices Institute’s (NEDI’s) $0.25~\mu \text {m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The MMIC operates in pulse conditions with typical pulse width of $100~\mu $ sec and 10% duty cycle. An output power of 47.5 dBm to 48.7 dBm with over 20 dB power gain and a power added efficiency (PAE) of 40% to 45% over the band of 8-12 GHz under a drain voltage of 28 V have been achieved. The chip size is $3.5\times 3.8$ mm2 and the amplifier delivers an output power density up to 5.57 W/mm2 over the chip area and up to 6.43 W/mm over the active periphery of the power stage. The thermal resistance is 1.7 °C/W measured in CW mode.
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