Abstract
A description is given of the design, fabrication and testing of a two-stage X-band GaAs MMIC (monolithic microwave integrated circuit) based on a novel multi-push-pull circuit design. The MMIC output stage employs an 8 mm MESFET arranged as four 2 mm MESFET unit cells alternately driven anti-phase. The first stage employs two 1.3 mm MESFETs, one for each signal phase. This circuit design and layout results in virtual grounds between adjacent FET cells making possible the elimination of several space-consuming components required for conventional MMIC designs, thereby shrinking the amount of expensive GaAs real estate required and improving yield and bandwidth. >
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