Abstract
SummaryIn this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two‐dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer‐aided design simulation results in a wide range variation of design parameters without introducing any empirical fitting parameters. Copyright © 2014 John Wiley & Sons, Ltd.
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