Abstract
In this letter, a compact shorted annular ring reduced surface-wave (SAR-RSW) antenna is designed and fabricated in 130 nm SiGe BiCMOS process at 267 GHz. The shorted annular ring is designed to reduce surface wave, and a rectangular slot is etched for miniaturization. The die area of proposed antenna is 450 × 600 μm2 . Compared to the conventional microstrip antenna, the antenna shows higher gain around 1.8 dBi at 267 GHz. The measurement bandwidth is 17 GHz (252–269 GHz) under the condition of $S_{11}$ less than −10 dB. Both the measurement and simulation results agree well.
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