A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS

Abstract

In this paper, a CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented. The proposed CMOS LNA is designed using common-gate (CG) topology at the first stage to achieve ultra wideband input matching. The common-gate has been cascaded with common-source (CS) current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power consumption. In order to ensure maximum power flow from CG input stage to gm boosted CS current-reused stage, parallel-series LC matching has been used. The output-matching network is used to improve the output reflection coefficient. The LNA is designed using standard 90 nm CMOS process for 3.1–10.6 GHz UWB. It exhibits a power-gain (S21) of 19.2–20.8 dB, an NF of 2.3–3.7 dB, a reverse-isolation (S12) of less − 53.8 dB and an S22 of less than − 6 dB for the entire UWB frequency range. The proposed LNA has an input reflection coefficient (S11) of less than − 10.6 dB for 3.1–10.6 GHz. It achieves input 1-dB compression point (P1dB) of − 17 dBm at 6 GHz and input third-order intercept point (IIP3) of − 8 dBm, while it consumes only 5.05 mW of power from a Vdd supply of 0.7 V.