Abstract

This paper presents a common-drain-based operational amplifier (OPAMP) fabricated by mono n-type indium-zinc-oxide (IZO) thin-film transistors (TFTs). Positive feedback technology is employed to the load TFTs by cross-coupled connection in order to boost the voltage gain of the common-drain differential pair. The OPAMP exhibits an open-loop voltage gain (Av) of 27 dB over a −3 dB bandwidth (BW) of 8.4 kHz at a DC supply voltage of 10 V. The measured unity-gain frequency (UGF), phase margin (PM) and DC power consumption are 119.4 kHz, 36° and 0.96 mW, respectively. Moreover, the chip area of the proposed OPAMP is as small as 0.37 mm $\times0.3$ mm since this concise topology needs only 10 TFTs.

Highlights

  • IN large-area and flexible electronics, thin-film transistors (TFTs) technology plays an important role in the integration for analog and digital building blocks

  • It is worthy to mention that, combining both merits of low temperature polycrystalline silicon (LTPS) TFTs with high on-current and oxide TFTs with low off-current, a CMOS operational amplifier (OPAMP) with excellent performance is successfully realized by low temperature polycrystalline silicon oxide (LTPO) technology in [19]

  • NMOS-only OPAMP design using metaloxide TFTs is constrained by the absence of available PMOS transistors for integration, thereby a current source load with high output resistance due to poor device mobility [20]

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Summary

Oxide TFTs

Abstract—This paper presents a common-drain-based operational amplifier (OPAMP) fabricated by mono n-type indium-zinc-oxide (IZO) thin-film transistors (TFTs). Positive feedback technology is employed to the load TFTs by cross-coupled connection in order to boost the voltage gain of the common-drain differential pair. The OPAMP exhibits an openloop voltage gain (Av) of 27 dB over a -3 dB bandwidth (BW) of 8.4 kHz at a DC supply voltage of 10 V. The measured unity-gain frequency (UGF), phase margin (PM) and DC power consumption are 119.4 kHz, 36° and 0.96 mW, respectively. The chip area of the proposed OPAMP is as small as 0.37 mm × 0.3 mm since this concise topology needs only 10 TFTs

INTRODUCTION
EXPERIMENTAL RESULTS AND DISCUSSION
CONCLUSIONS
No of TFTs

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