Abstract
An incorrect approximation urges Gebhardt et al. to comment on the published paper 'Magnetotransport properties of Hg1-xCdxTe in high magnetic fields' by De Vos et al. (see ibid., vol.19 p.2509 (1986)). For x=0.2, i.e. for semiconductor material, De Vos et al. interpret their results for the Hall coefficient as being due to 'magnetic freeze-out' of free carriers. However, there is no evidence for freeze-out in the samples investigated by De Vos et al. Gebhardt et. al. prove that the evaluation of the carrier density from the Hall effect data and the conclusions are incorrect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
