Abstract
A method of characteristics is applied with Monte Carlo simulation for the first time in the ion-assisted plasma etch profile calculation. The characteristic equations of etch profile evolution are derived. The Monte Carlo simulations of ions and neutrals transport are discussed. A five-point, non-uniform spatial smoothing scheme, and an adaptive spatial and temporal step size algorithm are used to solve the characteristic equations coupled to a Monte Carlo technique. The numerical results show that a successful computer model based on a rigorous mathematical method and simulation is achieved for the study of etch profile evolution in the very large scale integrated circuit fabrication.
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