A collisional global sheath – Bulk model of argon plasma for semiconductor scale manufacturing

Abstract

Plasma processes enhance the high-quality, semiconductor fabrication employed in large-scale industries. A crucial element in this process are the many gases that generate different reactive species at low temperatures. Capacitive plasma discharge radio frequency CCPs play a major role in semiconductor scale fabrication. The analysis of nonlinear dynamics in CCPs are complicated even under simple approaches. Therefore, we study self consistent collision fluid model, particle in cell simulation PIC, step approximation and finally the global model to find the accurate solution of merging plasma sheath -bulk region. For this purpose we study the self consistent collisional fluid model to find the accurate charge–voltage distribution V(Q) which controls the nonlinear dynamics of CCPs. The results against the PIC simulations and the more elaborate model step approximation is accomplished with higher accuracy. Consequently, the cubic polynomial formula V(Q) are applied in the global model. Accurate analytical global sheath-bulk calculations of the higher harmonic effect-exhibiting average power distributions, bulk potentials, and currents are obtained. This study provides an effective solution of collision regime for any arbitrary plasma reactor designs, including single-frequency and double frequency CCPs. Moreover, we used the argon gas as a good example in our study for a good ion etching. Finally, we can assist in achieving effective results that are consistent with experimental data and in large-scale applications in the semiconductor sector.