Abstract
By means of photoelectric effect, nanoscale data storage with lowered pulsed voltage was achieved in an ordered co-assembled organic thin film using the scanning tunneling microscopy (STM) lithography method. The local I–V characteristics of the self-assembled thin film showed that the ultraviolet light-induced charge transfer could increase the value of the tunneling current and consequently induce the effective reduction in the tunneling barrier height. Furthermore, the macroscopic I–V characteristics of the thin film also demonstrated that the photoelectric effect can be used to lowering the threshold voltage for memory device. The results indicate that the tunable optoelectrical property of a material is of significance for highly efficient STM-based data storage and reduces the power consumption of storage device.
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