Abstract
ABSTRACTIn this paper a new numerical model combining die scale and feature scale polishing characteristics for oxide CMP is proposed. This work is based on the effective density model [1-3] which takes into account a die scale pad deformation. We have extended this model to include the description of material removal at the feature scale. A pseudo topography discretization allows us to describe the polishing in down areas more accurately depending on the down area width. The physical parameters considered include the deformation of the polishing pad (die scale and feature scale), the removal rate of a blanket wafer polished under the same process conditions, and the removal rate in down areas for small polishing times.Comparison of simulated results with MIT testreticle experiments has been performed and evaluated.
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