Abstract
This paper presents a novel optoelectronic transimpedance amplifier (OTA) for short-range LiDAR sensors used in 180 nm CMOS technology, which consists of a main transimpedance amplifier (m-TIA) with an on-chip P+/N-well/Deep N-well avalanche photodiode (P+/NW/DNW APD) and a replica TIA with another on-chip APD, not only to acquire circuit symmetry but to also obtain concurrent automatic gain control (AGC) function within a narrow single pulse-width duration. In particular, for concurrent AGC operations, 3-bit PMOS switches with series resistors are added in parallel with the passive feedback resistor in the m-TIA. Then, the PMOS switches can be turned on or off in accordance with the DC output voltage amplitudes of the replica TIA. The post-layout simulations reveal that the OTA extends the dynamic range up to 74.8 dB (i.e., 1 µApp~5.5 mApp) and achieves a 67 dBΩ transimpedance gain, an 830 MHz bandwidth, a 16 pA/√Hz noise current spectral density, a −31 dBm optical sensitivity for a 10−12 bit error rate, and a 6 mW power dissipation from a single 1.8 V supply. The chip occupies a core area of 200 × 120 µm2.
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