Abstract
This paper presents the design of a CMOS low-noise amplifier (LNA) with partial inductive degeneration using active inductors in [Formula: see text]m technology. Both, the inductor of the partial degeneration and the load inductor, are actives. The inductors configurations are cascode with feedback resistance and Wu folded compact. The LNA has a gain of 13.2[Formula: see text]dB and a noise figure of 4.7[Formula: see text]dB at 1.8[Formula: see text]GHz. The layout has an active area of [Formula: see text]. The results are satisfactory, validating the compact design and demonstrating the technical feasibility of this proposed topology.
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