Abstract
Graphene is a suitable material for high efficient optical modulator. However, the graphene-based modulator has a strong polarization dependence. Here a high performance polarization-insensitive graphene modulator is proposed by utilizing a mode conversion structure. Our modulator is not only CMOS-compatible but also improves the modulation performance of the TE mode that has weak light–graphene interaction in graphene-on-Si structure. The theoretical analysis of the modulator was performed. The device can operate at the spectrum of 1.5 μm to 1.6 μm with the extinction ratio of >17dB, the insertion loss of <5.7dB for both modes, and the polarization-dependent loss of <2.3dB. When the modulator operates at the center wavelength of 1.550 μm, a low polarization-dependent loss of 0.6 dB is obtained. The 3dB modulation bandwidth is about 14.3 GHz based on theoretical calculation at the cost of 270 μm device length.
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