Abstract
The authors have investigated the two-dimensional (2D) electron hopping energy integral in order to calculate the impurity density of states of doped semiconductors. A cluster model is outlined for the two-dimensional disordered system. It is shown that the hopping matrix is very sensitive to a change in the dimensionality of the system, i.e. from 3D to 2D system. The impurity band is symmetric and has a considerable bandwidth for high concentration, while for low concentration it is drastically reduced by the cut-off of the long-range hopping energy. The results of other models are discussed.
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