Abstract
A closed-form charge control model (CCM) for threshold voltage (Vth) of single-heterojunction (AlGaN/GaN) devices is developed. The CCM reveals the mechanisms of how the space charges across the barrier of a heterojunction deplete or enhance 2-D electron gas. The V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of both depletion- and enhancement-mode heterostructure field-effect transistors may be calculated through this model. Considering the strained and relaxed states, and surface states, the calculated results for V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> are in good agreement with simulation results. The generalized form for CCM may have wide applications for theoretical-based design for V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of AlGaN/GaN devices.
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