Abstract
A new defect etching solution is presented especially developed for application on silicon-on-insulator (SOI) substrates. This FS Cr-free SOI etching solution is free of toxic hexavalent chromium. Very efficient in revealing crystalline defects, it provides a low etch rate, which makes it a promising candidate for Secco replacement on SOI films. Excellent correlation of etch pit densities with Secco solution has been obtained. The mechanism and characteristics of this solution will also be discussed.
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