Abstract
Long-term stability remains a key issue impeding the commercialization of halide perovskite solar cells (HPVKSCs). The diffusion of molecules and ions causes irreversible degradation to photovoltaic device performance. Here, we demonstrate a facile strategy for producing highly stable HPVKSCs by using a thin but compact semimetal Bismuth interlayer. The Bismuth film acts as a robust permeation barrier that both insulates the perovskite from intrusion by undesirable external moisture and protects the metal electrode from iodine corrosion. The Bismuth-interlayer-based devices exhibit greatly improved stability when subjected to humidity, thermal and light stresses. The unencapsulated device retains 88% of its initial efficiency in ambient air in the dark for over 6000 h; the devices maintain 95% and 97% of their initial efficiencies after 85 °C thermal aging and light soaking in nitrogen atmosphere for 500 h, respectively. These sound stability parameters are among the best for planar structured HPVKSCs reported to date.
Highlights
Long-term stability remains a key issue impeding the commercialization of halide perovskite solar cells (HPVKSCs)
Riedl et al.[15] reported an impermeable triple-layered electron transport layers (ETLs) composed of PCBM/ Al-doped ZnO (AZO)/SnOx, in which the SnOx layer deposited by atomic layer deposition (ALD) technique possesses an extremely low water vapor transmission rate of approximately 7 × 10 −5 g m−2 day−1
Regarding the chemically inert characteristic of Bi, we primarily focus on its anti-corrosivity to halide perovskites
Summary
Long-term stability remains a key issue impeding the commercialization of halide perovskite solar cells (HPVKSCs). Wang et al observed that I− ions could diffuse through the [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layer and react with the Ag electrode under thermal aging at 85 °C in a N2 atmosphere This reaction could facilitate the escape of I− ions from the perovskites and lead to an accelerated decomposition of the perovskite film, which results in an irreversible degradation of the device performance[12]. Riedl et al.[15] reported an impermeable triple-layered ETL composed of PCBM/ Al-doped ZnO (AZO)/SnOx, in which the SnOx layer deposited by atomic layer deposition (ALD) technique possesses an extremely low water vapor transmission rate of approximately 7 × 10 −5 g m−2 day−1 Their unencapsulated MAPbI3-based devices (MA-HPVKSCs) exhibited no degradation under thermal aging at 60 °C for 1000 h. In view of the above, when examining the periodic table of elements, we still find potential in the region between the metals and non-metals, i.e., bismuth (Bi) and antimony (Sb), which are referred to as semimetals
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