Abstract
A charge-sheet analysis of the short-channel MOSFET is presented. The expression achieved for the drain current, which takes into account both the drift and the diffusion components and also mobility degradation effects, holds in the strong-inversion, weak-inversion, and saturation regimes of the device operation, and results in a continuous function of all bias voltages. The model predicts an exponential dependence of the drain current on drain voltage in weak inversion and the threshold dependence on both channel length and drain voltage. Moreover, the proposed approach predicts results which satisfactorily compare with numerical simulations obtained from the two-dimensional analyzer MINIMOS and experimental data.
Published Version
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