Abstract
A charge recycle refresh for low-power DRAM data-retention, featuring alternative operation of two memory arrays, is proposed, and demonstrated using a 64 kb test chip with 0.25 /spl mu/m technology. After amplification in one array, the charges in that array are transferred to another array, where they are recycled for half amplification. The data-line current dissipation is only half that of the conventional refresh operation, and the voltage bounce of the power supply line is 60% of the conventional. This scheme is further extended for application to n arrays with 1/n data-line current dissipation. Moreover, the multi-array activation with charge recycle refresh is proposed, in which the same peak current as in the conventional scheme is achieved with a small number of refresh cycles for refreshing all the cells. >
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