A CFD study of the gas reaction path in growth of InN films in metal–organic chemical vapor deposition

Abstract

During simulation of the growth of indium nitride (InN) thin films in metal–organic chemical vapor deposition (MOCVD), different choices of kinetic parameters (activation energy Ea and pre-exponential factor A) for gas-phase reactions give rise to many uncertainties in the gas reaction path and growth rate. This study summarized and compared the kinetic parameters of gas-phase reactions during InN MOCVD growth. The InN MOCVD growth in a close-coupled showerhead reactor was simulated with varying kinetic parameters of gas-phase reactions. The effects of kinetic parameters on the gas reaction path were determined by comparing molar concentrations and growth rates of primary In-containing substances. The results show that with varying kinetic parameters, the gas reaction path is likely to be dominated by the addition or trimethylindium pyrolysis path, or to proceed through both reaction paths. Although the reaction path changes with varying kinetic parameters, the predicted growth rates do not vary substantially, because the total rate of transport of In-containing substances to the substrate changes little with the reaction path. The results also indicate that the contribution of pyrolytic products to the growth rate is greater than that of amine, whereas H radicals have minimal effect on the gas reaction path in InN MOCVD growth.