Abstract

A low power high dynamic range C-band GaAs MESFET low noise cascode amplifier is presented. An accurate small signal model and a noise model of the device based upon measurement are developed for the LNA design. At 5 GHz, a 50 /spl Omega/ noise figure of 1.9 dB and an IIP3 of 5 dBm are measured at a power consumption of 13.2 mW from a 3 V DC supply. The measurement results show good agreement with simulation results. This design has the highest IIP3 compared to other GaAs MESFET LNAs at this frequency range.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.