Abstract
The microstructures of Zn2SnO4 thin films were examined with a view to their exploitation for gas sensor. Zn2SnO4 thin films were prepared using the radio frequency magnetron sputtering with various annealing temperatures. Zn2SnO4 thin films were analyzed by X-ray diffraction and microstructural observations. The Zn2SnO4 thin films that were annealed at 700 and 900 °C contained second phase of ZnSnO3 and SnO2, respectively. The cross-sectional SEM image of a Zn2SnO4 thin film that were annealed at 700 °C showed a dense film lacking voids throughout the bulk. A carbon monoxide interdigitated-capacitor gas sensor, based on a n-type Zn2SnO4 thin film was realized. The capacitance of the sensor device increases linearly with concentration of carbon monoxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
