Abstract
This paper presents a capacitor-based multilevel gate driver for GaN HEMTs. The proposed gate driver suppresses false turn-on and reduces the reverse conduction loss with a single voltage supply. It has a capacitor which operates as a negative voltage supply to pull the gate terminal instantly to suppress false turn-on and then the gate terminal goes back to 0 V to reduce the reverse conduction loss with RC discharge. The proposed and conventional gate drivers are implemented on a 48V-to-12V synchronous buck converter. At 500 kHz and 24 W, efficiencies of the proposed and conventional gate drivers are 93.6% and 86.7% respectively. With the proposed gate driver at 48 W, the peak of ringing due to turning on of high-side switch is 0.45 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
