Abstract
We propose Al-Y alloys as possible candidates for interconnections for silicon integrated circuits, because we have determined that bulk Al-RE (rare-earth) metal alloy systems, particularly in the Al-Y alloy system, possess very small grains, high heat and high corrosion resistance. By use of a co-evaporating method, Al-Y alloy films within the composition range of 0–8.6 wt% (0–2.8 at%) were deposited directly onto (100) Si substrates. These films exhibit a significant decrease in grain size in comparison with pure Al film. Furthermore, the electrical resistivity of the films, which increases with increasing Y concentration in the as-deposited state, tends to decrease to the level of pure Al by annealing.
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