Abstract
Abstract The a.c. response of polycrystalline GaAs and (GaAs) 1− x (SiC 2 :H 2 ) x compounds grown by metal-organic chemical vapour deposition has been measured and analysed in the framework of the conductance model. It was demonstrated that the a.c. properties of the film were grain boundary controlled. The value of N ss has been estimated by assuming a uniform distribution of surface states. N ss is 3×10 11 cm -2 eV -1 in polycrystalline GaAs films and two orders of magnitude higher if the crystallites are embedded in a disordered Si y C 1− y matrix. In the latter case doping of the GaAs due to the diffusion of silicon atoms appears to occur as soon as the Si y C 1− y :H concentration ratio reaches 25%.
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